Samsung Electronics Co., Ltd. announced that it has developed industry’s high capacity 32 gigabit (Gb) DDR5 DRAM (dynamic random access memory) using 12 nanometre (nm) class process technology. This achievement comes after Samsung began mass production of its 12nm class 16Gb DDR5 DRAM in May 2023. It solidifies Samsung’s control in future DRAM technology and signals upcoming chapter of high capacity memory.
“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (artificial intelligence) and big data. We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.” says SangJoon Hwang, executive vice president of DRAM product and technology at Samsung Electronics.
Having developed its 64-kilobit (Kb) DRAM in 1983, Samsung has now gained in enhancing its DRAM capacity by a factor of 500,000 over last 40 years. Samsung’s recent memory product, developed using advanced processes and technologies to increase integration density and design optimisation, boasts industry’s high capacity for a single DRAM chip and offers double capacity of 16Gb DDR5 DRAM in same package size.
Previously, DDR5 128GB DRAM modules manufactured using 16Gb DRAM required Through Silicon Via (TSV) process. However, by using Samsung’s 32Gb DRAM, 128GB module can now be produced without using TSV process, while reducing power consumption by approximately 10% compared to 128GB modules with 16Gb DRAM. This technological change makes product the optimal solution for enterprises that emphasise power efficiency, such as data centres.
With its 12nm-class 32Gb DDR5 DRAM as a foundation, Samsung plans to continue expanding its lineup of high capacity DRAM to meet current and future demands of computing and IT (information technology) industry. Samsung will reaffirm its control in future DRAM market by supplying12nm class 32Gb DRAM to data centres as well as to customers that require applications related to AI and computing. The product will also play an important role in Samsung’s continued collaboration with other industry players. Mass production of 12nm-class 32Gb DDR5 DRAM is scheduled to begin by end of this year.
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